三星UFS闪存不完全一览(含命名规则举例)

三星UFS闪存不完全一览(含命名规则举例)

三星UFS闪存不完全一览(含命名规则举例) by 墨韵GS(2017年4月25日)

接口协议:UFS2.0,HS-G2 2-Lane(5.8Gbps)

KLUCG4J1BB-B0B1 MLC UFS2.0 64GB 11.5x13x1.0 FBGA153

KLUDG8J1BB-B0B1 MLC UFS2.0 128GB 11.5x13x1.2 FBGA153

接口协议:UFS2.0,HS-G3 1-Lane(5.8Gbps)

KLUAG2G1CE-B0B1 MLC UFS2.0 16GB 11.5x13x1.0 FBGA153

KLUBG4G1CE-B0B1 MLC UFS2.0 32GB 11.5x13x1.0 FBGA153

KLUCG4J1CB-B0B1 MLC UFS2.0 64GB 11.5x13x1.0 FBGA153

KLUDG8J1CB-B0B1 MLC UFS2.0 128GB 11.5x13x1.2 FBGA153

接口协议:UFS2.0,HS-G3 2-Lane(11.6Gbps)

KLUCG4J1EB-B0B1 MLC UFS2.0 64GB 11.5x13x1.0 FBGA153

KLUDG8J1EB-B0B1 MLC UFS2.0 128GB 11.5x13x1.2 FBGA153

KLUEG8U1EM-B0B1 TLC UFS2.0 256GB 11.5x13x1.2 FBGA153

接口协议:UFS2.1,HS-G3 2-Lane(11.6Gbps)

KLUCG4J1ED-B0C1 MLC UFS2.1 64GB 11.5x13x1.0 FBGA153

KLUDG8V1EE-B0C1 TLC UFS2.1 128GB 11.5x13x1.0 FBGA153

KLUEG8U1EM-B0C1 TLC UFS2.1 256GB 11.5x13x1.0 FBGA153

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命名规则举例:KLUDG8V1EE-B0C1(UFS2.1,TLC)

字符1: K: "Samsung Memory" 三星内存(运存/闪存)

字符2: L: "MOVI NAND, MCP" 闪存或MCP产品

字符3: U: 闪存接口类型为"UFS"

字符4-5 DG: Memory density is 128GB (AG for 16GB, BG for 32GB,CG for 64GB, EG for 256GB)

字符6: 8: Composition is NAND8 + Microcontroller 封装中含有8个NAND芯片及微控制器

字符7: V: NAND Small Clasification (Type or Density) is TLC 闪存架构为TLC

字符8: 1: Supply voltage, mode 电压,模式

字符9: E: Controller version 控制器版本(与HS-Gx x-Lane有关)

字符10:E: Flash type E-die 闪存颗粒类型 E-die(M、A、B、C、D、E、F、G)

字符11: -: 连字符

字符12: B: Package type is FBGA lead-free, halogen-free 无铅无卤素FBGA封装

字符13: 0: Revision None 未修改原始版本

字符14: C: Speed 高速 (与接口协议版本有关)

字符15: 1: Normal sample 正常样品

其中,第7个字符闪存架构有关:

1)SLC(Single-Level Cell)为1或9;

2)TLC(Triple-Level Cell)为V、U或Z;

3)MLC(Multi-Level Cell)为A、B、C、D、E、G、J、K等。


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samsung.com/us/samsungs

Search Results for KLU

Samsung Semiconductor Global Website

UFS - Flash Storage

[Discussion] Mate 9/Mate9 Pro Flash Part Numbers (most of them are UFS2.0)

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水平有限,时间仓促,错漏请予以指正。

编辑于 2017-05-06